Search results for "electric [form factor]"

showing 10 items of 1265 documents

Half-Heusler superlattices as model systems for nanostructured thermoelectrics

2015

The efficiency of thermoelectric materials is directly related to the dimensionless figure of merit , therefore, one of the means to improve ZT is to reduce the thermal conductivity. Our research focuses on half-Heusler superlattices (SLs) and the relationship between the SL period and the thermal conductivity. The cross-plane thermal conductivity of DC-sputtered TiNiSn/HfNiSn SLs was measured by the 3 method at room temperature and a clear reduction of was achieved for all SL periods, in particular for periods smaller than 20 nm. Moreover, the thermal conductivities of TiNiSn and HfNiSn single films display reduced values compared to the literature data for bulk materials. Furthermore, we …

010302 applied physicsMaterials scienceCondensed matter physicsDimensionless figure of meritSuperlattice02 engineering and technologySurfaces and InterfacesSurface finish021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materials01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsQuality (physics)Thermal conductivity0103 physical sciencesThermalMaterials ChemistryElectrical and Electronic Engineering0210 nano-technologyphysica status solidi (a)
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Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1−xSn ) thin films

2019

Abstract The (Ti, Zr, Hf)Co(Sb 1 − x Snx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb 1 − x Snx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole locali…

010302 applied physicsMaterials scienceCondensed matter physicsDopingMetals and Alloys02 engineering and technologySurfaces and Interfaces021001 nanoscience & nanotechnologyThermoelectric materials01 natural sciencesAcceptorSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSputteringElectrical resistivity and conductivitySeebeck coefficient0103 physical sciencesThermoelectric effectMaterials ChemistryThin film0210 nano-technologyThin Solid Films
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Half-Heusler materials as model systems for phase-separated thermoelectrics

2015

Semiconducting half-Heusler compounds based on NiSn and CoSb have attracted attention because of their good performance as thermoelectric materials. Nanostructuring of the materials was experimentally established through phase separation in (T1−x′Tx″)T(M1−yMy′) alloys when mixing different transition metals (T, T′, T″) or main group elements (M, M′). The electric transport properties of such alloys depend not only on their micro- or nanostructure but also on the atomic-scale electronic structure. In the present work, the influence of the band structure and density of states on the electronic transport and thermoelectric properties is investigated in detail for the constituents of phase-sepa…

010302 applied physicsMaterials scienceCondensed matter physicsFermi energy02 engineering and technologySurfaces and InterfacesElectronic structureCubic crystal system021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materials01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPhase (matter)0103 physical sciencesThermoelectric effectMaterials ChemistryDensity of statesElectrical and Electronic Engineering0210 nano-technologyElectronic band structurephysica status solidi (a)
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Modification of magnetic anisotropy in Ni thin films by poling of (011) PMN-PT piezosubstrates

2016

ABSTRACTThis study reports the magnetic and magnetotransport properties of 20 nm thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetoresistance (MR), as well as the magnetization reversal, is found to depend on the polarization state of the piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by a factor of 12 at room temperature and a factor of 21 at 50 K for the current direction along the PMN-PT [100] direction, and slightly increases for the [01] current direction. Simultaneously, a strong increase in the …

010302 applied physicsMaterials scienceCondensed matter physicsMagnetoresistancePoling02 engineering and technologySubstrate (electronics)Sputter depositionCoercivity021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesElectronic Optical and Magnetic MaterialsMagnetic anisotropyNuclear magnetic resonanceArtificial multiferroicsthin films0103 physical sciencesmagnetoelectric couplingddc:530CrystalliteThin film0210 nano-technology
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Photoelectron Emission from Metal Surfaces Induced by VUV-emission of Filament Driven Hydrogen Arc Discharge Plasma

2015

Photoelectron emission measurements have been performed using a filament-driven multi-cusp arc discharge volume production H^- ion source (LIISA). It has been found that photoelectron currents obtained with Al, Cu, Mo, Ta and stainless steel (SAE 304) are on the same order of magnitude. The photoelectron currents depend linearly on the discharge power. It is shown experimentally that photoelectron emission is significant only in the short wavelength range of hydrogen spectrum due to the energy dependence of the quantum efficiency. It is estimated from the measured data that the maximum photoelectron flux from plasma chamber walls is on the order of 1 A per kW of discharge power.

010302 applied physicsMaterials scienceHydrogenPhysics::Instrumentation and DetectorsFluxchemistry.chemical_elementFOS: Physical sciencesPlasma01 natural sciences7. Clean energyPhysics - Plasma PhysicsIon source010305 fluids & plasmasElectric arcPlasma Physics (physics.plasm-ph)chemistryPhysics::Plasma Physics0103 physical sciencesPhysics::Atomic and Molecular ClustersQuantum efficiencyPhysics::Atomic PhysicsAtomic physicsHydrogen spectral seriesOrder of magnitude
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Microstructure and electric properties of low-pressure plasma sprayed β-FeSi 2 based coatings

2017

Abstract Thermoelectric material β-FeSi 2 based coating was fabricated by the technique low-pressure plasma spray (LPPS) on the Al 2 O 3 substrate from different alloy powders. During the process LPPS, the phase transformation had occurred through the peritectoid, eutectoid reaction and their inverse reaction. The grain size of the as-sprayed β-FeSi 2 doped Co coatings was reduced comparing with the original feedstock powders, which implied the thermal conductivity could effectively decreased by the LPPS process. The room temperature electrical conductivity showed metal and semiconductor properties on the as-sprayed and annealed coatings. This method and the results could solve the problems…

010302 applied physicsMaterials scienceMetallurgyAlloy02 engineering and technologySurfaces and InterfacesGeneral Chemistryengineering.material021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materialsMicrostructure01 natural sciencesGrain sizeSurfaces Coatings and FilmsThermal conductivityCoating0103 physical sciencesMaterials ChemistryengineeringComposite material0210 nano-technologyThermal sprayingEutectic systemSurface and Coatings Technology
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Half-Heusler compounds: novel materials for energy and spintronic applications

2012

Half-Heusler compounds are an impressive class of materials with a huge potential for different applications such as future energy applications and for spintronics. The semiconducting Heusler compounds can be identified by the number of valence electrons. The band gap can be tuned between 0 and 4 eV by the electronegativity difference of the constituents. Magnetism can be introduced in these compounds by using rare-earth elements, manganese or ‘electron’ doping. Thus, there is a great interest in the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. The combination of different properties such as superconductivity and topological edge states leads to new multifunct…

010302 applied physicsMaterials scienceSpintronicsCondensed Matter::OtherBand gapMagnetismNanotechnology02 engineering and technologyNarrow-gap semiconductorMagnetic semiconductor021001 nanoscience & nanotechnologyCondensed Matter PhysicsThermoelectric materials01 natural sciences7. Clean energyElectronic Optical and Magnetic MaterialsElectronegativityCondensed Matter::Materials Science0103 physical sciencesMaterials ChemistryCondensed Matter::Strongly Correlated ElectronsElectrical and Electronic Engineering0210 nano-technologyValence electronSemiconductor Science and Technology
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Deformation of bubbles in silicon gel insulation under an alternating electric field

2019

The behavior of silicone gel under electrical stress plays a significant role in the reliability and durability of high voltage electronic power devices due to its widespread use for the insulation of IGBT modules and other components. The charges accumulation at the bubble boundaries leads to significant displacements due to the establishment of Coulombic forces and the high deformability of colloidal system. The main purpose of this work is to validate a numerical approach useful to investigate, for a given silicone gel, the non-linear relation between the applied HVDC stress and the electric field over an air bubble within the insulation bulk. The analysis has been carried out by means o…

010302 applied physicsMaterials scienceinsulationreliabilityDeformation (mechanics)020209 energyBubbleHigh voltage02 engineering and technologyDielectric01 natural sciencesSpace chargeIGBTSilicone gelStress (mechanics)chemistry.chemical_compoundpartial dischargeSettore ING-IND/31 - ElettrotecnicaSiliconechemistryElectric field0103 physical sciences0202 electrical engineering electronic engineering information engineeringComposite material
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Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics

2010

Atomic layer deposition (ALD) of ZrO 2 ―Gd 2 O 3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO 2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd 2 O 3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd 2 O 3 content above 3.4 cat. % resulted in the decreased permittivity…

010302 applied physicsPermittivityMaterials scienceRenewable Energy Sustainability and the EnvironmentAnalytical chemistryEquivalent oxide thickness02 engineering and technologyDielectric021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAtomic layer depositionElectric field0103 physical sciencesMaterials ChemistryElectrochemistry0210 nano-technologyCurrent densityLeakage (electronics)High-κ dielectricJournal of The Electrochemical Society
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The effect of bias field on the dielectric response of Ba0.95Pb0.05TiO3+Со2О3

2021

The nature of the dielectric response in ferroelectric ceramics Ba0.95Pb0.05TiO3+Со2О3 (BPTC) under the influence of a constant bias field EB in the phase transition region is studied. It is found ...

010302 applied physicsPhase transitionMaterials scienceCondensed matter physicsFerroelectric ceramics02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesDielectric responseElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistry0103 physical sciencesBarium titanate0210 nano-technologyConstant (mathematics)Bias fieldFerroelectrics
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